Tiny Tapeout GF 0.2 · Die TTPG on wafer.space Run 1: the power-gated edition
039 · RISC-V and CPUs · 3 × 4 tiles
by Michael Bell · repository @MichaelBell
Rendered from the layout at 0.67 µm per pixel. Layers: NwellDiffusionPolysiliconMetal 1Metal 2Metal 3Metal 4Metal 5Top metalPad openings
| Core average logic cells per mm² | 25k (33% of buffer maximum) |
|---|---|
| Densest 0.1 mm square logic cells per mm² | 37k (49% of buffer maximum) |
| Core covered by logic | 74% |
| Transistor density transistors per mm² | 319k average, 314k in the 0.1 mm square with the most logic cells |
Every figure here is measured from the public layout, the same way for every design on the chip: see data and method, and how its designs used the process.
A Risc-V SoC for Tiny Tapeout
Source repository Its page on Tiny TapeoutBuy this chip
| Size | 1076 × 737 µm (0.793 mm²) |
|---|---|
| Macro | tt_um_MichaelBell_tinyQV |
| Files | documentation · licence · layout and netlist in Tiny Tapeout GF 0.2 |
| Tiles | 3 × 4 at column 0, row 11 of the tile grid |
| Mux address | 39 |
| Language | Verilog |
| Clock | 24 MHz |
| Built with | LibreLane 3.0.0.dev45, open_pdks 8fa792c6f7db |
| Transistors | 254,546 |
| Logic cells | 20,084 + 25,932 filler and tap cells |
| Libraries | 7t-5V (20k) |
| SRAM | No SRAM |
Which parts of the GF180MCU process this design uses: its transistor voltages and where they come from, its gate oxides, and any devices drawn by hand outside the standard cells, SRAM and pads.
| 5 V | 7t-5V standard cells |
|---|---|
| Gate oxides | Thick only (5 V/6 V) in the design itself |
How this project's area splits between logic cells, filler and tap cells and other.
The ten standard cells this design uses most.
| Cell | Library | Instances | What it does |
|---|---|---|---|
| nand2_1 | 7t-5V | 2,326 | 2-input NAND gate |
| oai21_1 | 7t-5V | 1,905 | OR-AND-Invert compound gate |
| dffq_4 | 7t-5V | 1,638 | D flip-flop (1 bit storage, 4x drive) |
| aoi21_1 | 7t-5V | 1,458 | AND-OR-Invert compound gate |
| dffq_1 | 7t-5V | 1,343 | D flip-flop (1 bit storage) |
| nor2_1 | 7t-5V | 1,205 | 2-input NOR gate |
| inv_1 | 7t-5V | 978 | Inverter |
| buf_4 | 7t-5V | 964 | Buffer (4x drive) |
| mux2_2 | 7t-5V | 652 | 2-input multiplexer (2x drive) |
| aoi22_1 | 7t-5V | 647 | AND-OR-Invert (2x2 inputs) |
Logic cells per mm² in each 0.1 mm square of the project (counted in the square, scaled up to a mm²). Hatched outlines are SRAM macros; the red outline is the densest 0.1 mm square that avoids them (37k logic cells per mm²), found by sliding a 0.1 mm square over the project in 20 µm steps, so it can straddle the fixed squares and find more than any one of them. Squares at the edges are partial, so they read low.
TinyQV RISC-V SoC has been made on 11 shuttles since Apr 2024. Every version, oldest first, with this one in bold:
Tiny Tapeout tile Google shuttle wafer.space die
TinyQV RISC-V SoC started as a few tiles on Tiny Tapeout 6 and went on to dies of its own on wafer.space Run 1 and wafer.space Run 2. When your design outgrows its tiles, a whole die on a wafer.space run is the next step.
Tiny Tapeout and wafer.space are independent companies that work together (announcement). Tiny Tapeout runs its own shuttles: it takes the projects, builds the die, and sells and supports the chips and boards. wafer.space has the dies manufactured on its GF180MCU runs, and these pages are wafer.space's measurements of them. For anything about a Tiny Tapeout project, chip or order, contact Tiny Tapeout.