wafer.space Run 1

Racquet Half r1p0 (1/2 slot)

GD02 · RISC-V and CPUs · ½ × 1 slot

Rendered from the layout at 2.5 µm per pixel. Layers: NwellDiffusionPolysiliconMetal 1Metal 2Metal 3Metal 4Metal 5Top metalPad openings

Logic density

Inside the core
logic cells per mm²
8k (10% of buffer maximum)
over the 4.46 mm² core: what the design itself packed
Inside the seal ring
logic cells per mm²
4k
over all 9.57 mm² of the slot, pad ring included
Densest mm²
logic cells per mm²
12k (15% of buffer maximum)
Core covered by logic21%
Transistor density
transistors per mm²
217k average, 151k in the mm² with the most logic cells

Every figure here is measured from the public layout, the same way for every design on the run: see data and method, and how its designs used the process.

An SoC based off the award-winning SERV, the world’s smallest RISC-V CPU. With all the room available in the full-slot we can fit 9 cores connected to local SRAM. Each core is loaded from SPI FLASH on boot, and connected to some peripherals. A queue peripheral enables both synchronisation and core-core communications.

Die1.94 × 5.12 mm (9.9 mm²)
Core area4.46 mm² inside the pad ring
as set in the design's own layout settings
Inside the seal ring9.57 mm² (the die less its 26 µm seal ring)
Placements1 on the reticle, in slot H3 GD02 on the reticle
Bond pads72
Transistors968,782
Logic cells34,564 + 78,256 filler and tap cells
Libraries 7t-5V (35k)
SRAM9 macros, 36,864 bits

Submission

LicenceApache-2.0 declared
Repository: Apache-2.0 in LICENSE — agrees
Templatewafer-space/gf180mcu-project-template 1.3.5
How it was checked
Commit and PDK pin The licence and template were read from the repository at commit 8c1de9c2345f.The template release named above is the one whose Makefile pins the same PDK as that commit (PDK_TAG 1.6.6).
Chip-on-boardNot selected at submission · bonding results
PrecheckPassed the check it was accepted on, 2025-12-17, gf180mcu-precheck 1.5.5 (from its image)
Passed latest re-run, 2026-08-02, gf180mcu-precheck 1.7.3
step results and logs

Process features

Which parts of the GF180MCU process this design uses: its transistor voltages and where they come from, its gate oxides, and any devices drawn by hand outside the standard cells, SRAM and pads.

5 V7t-5V standard cells, fd SRAM
Gate oxidesThick only (5 V/6 V) in the design itself
I/O librarygf180mcu_fd_io (834 cells), gf180mcu_ws_io (16 cells)

Where the area went

How this design's area splits between logic cells, SRAM, filler and tap cells, other and pad ring.

10%
19%
14%
55%
  • Logic cells 0.95 mm² (10%)
  • SRAM 1.88 mm² (19%)
  • Filler and tap cells 1.44 mm² (14%)
  • Other 0.19 mm² (2%)
  • Pad ring 5.47 mm² (55%)

Most used cells

The ten standard cells this design uses most.

CellLibraryInstancesWhat it does
nand2_17t-5V 4,2632-input NAND gate
nor2_17t-5V 2,4062-input NOR gate
oai21_17t-5V 2,174OR-AND-Invert compound gate
mux2_27t-5V 2,1112-input multiplexer (2x drive)
aoi21_17t-5V 2,056AND-OR-Invert compound gate
dffq_17t-5V 2,055D flip-flop (1 bit storage)
dffrnq_17t-5V 2,050D flip-flop with reset
dlyb_17t-5V 1,831Delay buffer
clkinv_17t-5V 1,597Clock inverter
buf_47t-5V 1,420Buffer (4x drive)

Logic density map

28 logic cells, 52,476 transistors, 24% SRAM 70 logic cells, 65,171 transistors 714 logic cells, 92,616 transistors, 45% SRAM 8,623 logic cells, 138,730 transistors 1,216 logic cells, 88,230 transistors, 45% SRAM 11,735 logic cells, 150,456 transistors 952 logic cells, 87,863 transistors, 45% SRAM 10,692 logic cells, 149,523 transistors 42 logic cells, 63,552 transistors, 29% SRAM 492 logic cells, 79,872 transistors 0 logic cells, 156 transistors 0 logic cells, 137 transistors gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 <1k <1k 1k 9k 1k 12k 1k 11k <1k <1k

Logic cells per mm² in each square millimetre of the die. Hatched outlines are SRAM macros. Squares at the edges are partial, so they read low.

SRAM macros

The ready-made memory blocks this design uses.

MacroCountBits each
gf180mcu_fd_ip_sram__sram512x8m8wm19 4,096

SERV multi-core RISC-V SoC has been made on 5 shuttles since Dec 2022. Every version, oldest first, with this one in bold:

  1. Dec 2022 · Tiny Tapeout 2 serv - Serial RISC-V CPU — 1 × 1 tile, one SERV core
  2. Dec 2022 · Google GFMPW-0 6079 Serv tri-core (GF180 MPW0 Serv) — Caravel chip, three SERV cores
  3. Apr 2023 · Tiny Tapeout 3 serv - Serial RISC-V CPU — 1 × 1 tile, one SERV core
  4. Dec 2025 · wafer.space Run 1 GD02 Racquet Half r1p0 (1/2 slot) — ½ × 1 slot GD03 Racquet r2p0 - 23 core SoC — 1 × 1 slot, 23 SERV cores GD04 Racquet Wide 1x0.5 — 1 × ½ slot
  5. Jul 2026 · wafer.space Run 2 GD04 Racquet Wide 1x0.5 — 1 × ½ slot

Tiny Tapeout tile Google shuttle wafer.space die

Its dies compared

Every die of this design measured here, oldest first, with this one in bold.

Made onSlotLibraryGate oxides Logic cellsPer mm² of coreDensest SRAM
Google GFMPW-0 · 6079 1 × 17t-5V 5 V/6 V only 17,345 2k 12k 1 macro
wafer.space Run 1 · GD02 ½ × 17t-5V 5 V/6 V only 34,564 8k 12k 9 macros
wafer.space Run 1 · GD03 1 × 17t-5V 5 V/6 V only 78,208 6k 0 23 macros
wafer.space Run 1 · GD04 1 × ½9t-5V 5 V/6 V only 35,525 7k 18k 6 macros
wafer.space Run 2 · GD04
the same logic cells and transistors as GD04 on wafer.space Run 1
1 × ½9t-5V 5 V/6 V only 35,525 7k 18k 6 macros

From Tiny Tapeout tiles to a die of its own

SERV multi-core RISC-V SoC was tried on Tiny Tapeout 2 and a Google shuttle, and went on to dies of its own on wafer.space Run 1 and wafer.space Run 2.

The fabricated die

A photograph of the finished chip, taken through a microscope after manufacture: optical micrograph © 2026 InfoSecDJ, CC BY-SA 4.0

Chip-on-board bonding

Wire bonding results for GD02

From the chip-on-board results page.

Precheck

Before a design is made, the wafer.space platform checks it against the foundry's design rules. GD02 was accepted on this check, and has been checked again since with newer rules.

All 15 steps passed, with 0 KLayout DRC errors, on 2025-12-17.

Every step, and the latest re-run
StepAccepted on
check 129, 2025-12-17, initial, gf180mcu-precheck 1.5.5 (from its image)
PDK wafer-space/gf180mcu 1.6.6, LibreLane e2f0b0e
Latest re-run
check 759, 2026-08-02, drc_update, gf180mcu-precheck 1.7.3
PDK open_pdks 1.0.604, LibreLane 5fe3db1
KLayout.ReadLayoutpassedpassed
KLayout.CheckTopLevelpassedpassed
KLayout.CheckSizepassedpassed
KLayout.GenerateIDpassedpassed
KLayout.Rendernot in this flowpassed
KLayout.Densitypassedpassed
Checker.KLayoutDensitypassedpassed
KLayout.ZeroAreaPolygonspassedpassed
Checker.KLayoutZeroAreaPolygonspassedpassed
KLayout.Antennapassedpassed
Checker.KLayoutAntennapassedpassed
Magic.DRCpassedpassed
Checker.MagicDRCpassedpassed
KLayout.DRCpassedpassed
Checker.KLayoutDRCpassedpassed
KLayout.WriteLayoutpassedpassed
KLayout DRC errors00
Magic DRC errors (advisory)00
Filessteps · log (gzip)steps · log (gzip)

The steps of the gf180mcu-precheck LibreLane flow, as run by platform.wafer.space. The design was accepted on the newest finished check before it was submitted; later re-runs check the same file with updated rules. KLayout DRC is the sign-off check. Magic DRC is advisory: its count does not stop a design. In the logs, Magic's "Error while reading cell" lines about fill cells are messages from its reader, not check failures.

Want a chip of your own like this one?

wafer.space Run 3 takes orders until 9 December 2026. Or start smaller with Tiny Tapeout: the next Tiny Tapeout GF180MCU chips take projects until 7 December 2026, for wafer.space Run 3.