wafer.space Run 1

Racquet Wide 1x0.5

GD04 · RISC-V and CPUs · 1 × ½ slot

Rendered from the layout at 2.5 µm per pixel. Layers: NwellDiffusionPolysiliconMetal 1Metal 2Metal 3Metal 4Metal 5Top metalPad openings

Logic density

Inside the core
logic cells per mm²
7k (12% of buffer maximum)
over the 5.02 mm² core: what the design itself packed
Inside the seal ring
logic cells per mm²
4k
over all 9.61 mm² of the slot, pad ring included
Densest mm²
logic cells per mm²
18k (31% of buffer maximum)
Core covered by logic28%
Transistor density
transistors per mm²
198k average, 234k in the mm² with the most logic cells

Every figure here is measured from the public layout, the same way for every design on the run: see data and method, and how its designs used the process.

A Configuration of racquet, a multicore Serv based SoC

- 9t 5v0 standard cells

- Difetto to incorporate DFT scan chain into design

- 6 cores

Die3.93 × 2.53 mm (9.9 mm²)
Core area5.02 mm² inside the pad ring
as set in the design's own layout settings
Inside the seal ring9.61 mm² (the die less its 26 µm seal ring)
Placements2 on the reticle, in slots D1, F1 GD04 on the reticle
Bond pads72
Transistors992,924
Logic cells35,525 + 104,165 filler and tap cells
Libraries 9t-5V (36k)
SRAM6 macros, 24,576 bits

Submission

LicenceBSD-3-Clause declared
Repository: Apache-2.0 in LICENSE, not the declared licence
Templatewafer-space/gf180mcu-project-template 1.3.1 or 1.3.2
How it was checked
Commit and PDK pin The licence and template were read from the repository at commit a64a899dabd2.The template releases named above are the ones whose Makefile pins the same PDK as that commit (PDK_TAG 1.6.4).
Chip-on-boardNot selected at submission · bonding results
PrecheckPassed the check it was accepted on, 2025-12-17, gf180mcu-precheck 1.5.5 (from its image)
Passed latest re-run, 2026-07-30, gf180mcu-precheck 1.7.3
step results and logs

Process features

Which parts of the GF180MCU process this design uses: its transistor voltages and where they come from, its gate oxides, and any devices drawn by hand outside the standard cells, SRAM and pads.

5 V9t-5V standard cells, fd SRAM
Gate oxidesThick only (5 V/6 V) in the design itself
I/O librarygf180mcu_fd_io (742 cells), gf180mcu_ws_io (16 cells)

Where the area went

How this design's area splits between logic cells, SRAM, filler and tap cells, other and pad ring.

14%
13%
23%
50%
  • Logic cells 1.40 mm² (14%)
  • SRAM 1.26 mm² (13%)
  • Filler and tap cells 2.26 mm² (23%)
  • Other 0.10 mm² (1%)
  • Pad ring 4.92 mm² (50%)

Most used cells

The ten standard cells this design uses most.

CellLibraryInstancesWhat it does
nand2_19t-5V 7,3752-input NAND gate
dlyd_19t-5V 2,774Delay buffer
oai21_19t-5V 2,556OR-AND-Invert compound gate
clkinv_19t-5V 2,456Clock inverter
sdffrnq_19t-5V 1,993Scan D flip-flop with reset
sdffq_19t-5V 1,434Scan D flip-flop
oai21_29t-5V 1,369OR-AND-Invert compound gate (2x drive)
nand3_19t-5V 1,3463-input NAND gate
clkbuf_89t-5V 1,129Clock buffer (8x drive)
nand2_29t-5V 1,1052-input NAND gate (2x drive)

Logic density map

47 logic cells, 51,474 transistors, 17% SRAM 4,222 logic cells, 114,314 transistors, 4% SRAM 4,750 logic cells, 119,147 transistors, 4% SRAM 156 logic cells, 45,006 transistors, 18% SRAM 85 logic cells, 87,474 transistors, 34% SRAM 12,811 logic cells, 220,686 transistors, 7% SRAM 11,916 logic cells, 218,752 transistors, 9% SRAM 299 logic cells, 75,957 transistors, 36% SRAM 31 logic cells, 10,468 transistors, <1% SRAM 1,151 logic cells, 22,604 transistors 34 logic cells, 17,832 transistors 23 logic cells, 9,210 transistors, <1% SRAM gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 Densest SRAM-free mm²: 18,167 logic cells <1k 4k 5k <1k <1k 13k 12k <1k

Logic cells per mm² in each square millimetre of the die. Hatched outlines are SRAM macros; the red outline is the densest mm² that avoids them (18k logic cells per mm²), found by sliding a 1 mm square over the die in 0.1 mm steps, so it can straddle the fixed squares and find more than any one of them. Squares at the edges are partial, so they read low.

SRAM macros

The ready-made memory blocks this design uses.

MacroCountBits each
gf180mcu_fd_ip_sram__sram512x8m8wm16 4,096

SERV multi-core RISC-V SoC has been made on 5 shuttles since Dec 2022. Every version, oldest first, with this one in bold:

  1. Dec 2022 · Tiny Tapeout 2 serv - Serial RISC-V CPU — 1 × 1 tile, one SERV core
  2. Dec 2022 · Google GFMPW-0 6079 Serv tri-core (GF180 MPW0 Serv) — Caravel chip, three SERV cores
  3. Apr 2023 · Tiny Tapeout 3 serv - Serial RISC-V CPU — 1 × 1 tile, one SERV core
  4. Dec 2025 · wafer.space Run 1 GD04 Racquet Wide 1x0.5 — 1 × ½ slot GD02 Racquet Half r1p0 (1/2 slot) — ½ × 1 slot GD03 Racquet r2p0 - 23 core SoC — 1 × 1 slot, 23 SERV cores
  5. Jul 2026 · wafer.space Run 2 GD04 Racquet Wide 1x0.5 — 1 × ½ slot

Tiny Tapeout tile Google shuttle wafer.space die

Its dies compared

Every die of this design measured here, oldest first, with this one in bold.

Made onSlotLibraryGate oxides Logic cellsPer mm² of coreDensest SRAM
Google GFMPW-0 · 6079 1 × 17t-5V 5 V/6 V only 17,345 2k 12k 1 macro
wafer.space Run 1 · GD02 ½ × 17t-5V 5 V/6 V only 34,564 8k 12k 9 macros
wafer.space Run 1 · GD03 1 × 17t-5V 5 V/6 V only 78,208 6k 0 23 macros
wafer.space Run 1 · GD04 1 × ½9t-5V 5 V/6 V only 35,525 7k 18k 6 macros
wafer.space Run 2 · GD04
the same logic cells and transistors as GD04 on wafer.space Run 1
1 × ½9t-5V 5 V/6 V only 35,525 7k 18k 6 macros

From Tiny Tapeout tiles to a die of its own

SERV multi-core RISC-V SoC was tried on Tiny Tapeout 2 and a Google shuttle, and went on to dies of its own on wafer.space Run 1 and wafer.space Run 2.

The fabricated die

A photograph of the finished chip, taken through a microscope after manufacture: optical micrograph © 2026 InfoSecDJ, CC BY-SA 4.0

Chip-on-board bonding

Wire bonding results for GD04

From the chip-on-board results page.

Precheck

Before a design is made, the wafer.space platform checks it against the foundry's design rules. GD04 was accepted on this check, and has been checked again since with newer rules.

All 15 steps passed, with 0 KLayout DRC errors, on 2025-12-17.

Every step, and the latest re-run
StepAccepted on
check 155, 2025-12-17, drc_update, gf180mcu-precheck 1.5.5 (from its image)
PDK wafer-space/gf180mcu 1.6.6, LibreLane e2f0b0e
Latest re-run
check 701, 2026-07-30, drc_update, gf180mcu-precheck 1.7.3
PDK open_pdks 1.0.604, LibreLane 5fe3db1
KLayout.ReadLayoutpassedpassed
KLayout.CheckTopLevelpassedpassed
KLayout.CheckSizepassedpassed
KLayout.GenerateIDpassedpassed
KLayout.Rendernot in this flowpassed
KLayout.Densitypassedpassed
Checker.KLayoutDensitypassedpassed
KLayout.ZeroAreaPolygonspassedpassed
Checker.KLayoutZeroAreaPolygonspassedpassed
KLayout.Antennapassedpassed
Checker.KLayoutAntennapassedpassed
Magic.DRCpassedpassed
Checker.MagicDRCadvisory warningadvisory warning
KLayout.DRCpassedpassed
Checker.KLayoutDRCpassedpassed
KLayout.WriteLayoutpassedpassed
KLayout DRC errors00
Magic DRC errors (advisory)3,1223,122
Filessteps · log (gzip)steps · log (gzip)

The steps of the gf180mcu-precheck LibreLane flow, as run by platform.wafer.space. The design was accepted on the newest finished check before it was submitted; later re-runs check the same file with updated rules. KLayout DRC is the sign-off check. Magic DRC is advisory: its count does not stop a design. In the logs, Magic's "Error while reading cell" lines about fill cells are messages from its reader, not check failures.

Want a chip of your own like this one?

wafer.space Run 3 takes orders until 9 December 2026. Or start smaller with Tiny Tapeout: the next Tiny Tapeout GF180MCU chips take projects until 7 December 2026, for wafer.space Run 3.