Google GF180MCU open shuttle (GFMPW‑0) · Run by Google and Efabless
105A · Retro computing · 1 × 1 slot
Rendered from the layout at 2.5 µm per pixel. Layers: NwellDiffusionPolysiliconMetal 1Metal 2Metal 3Metal 4Metal 5Top metalPad openings
| Core average logic cells per mm² | 1k (1% of buffer maximum) |
|---|---|
| Densest mm² logic cells per mm² | 5k (6% of buffer maximum) |
| Core covered by logic | 1% |
| Transistor density transistors per mm² | 12k average, 107k in the mm² with the most logic cells |
Every figure here is measured from the public layout, the same way for every design on the run: see data and method, and how its designs used the process.
Avalon Semiconductors AS2650: partial implementation of the Signetics 2650 8-bit CPU architecture from 1975.
| Die | 3.93 × 5.12 mm (20.1 mm²) |
|---|---|
| Core area | 9.00 mm² inside the pad ring
its user_project_wrapper cell |
| Placements | 1 on the reticle, in slot B6 |
| Bond pads | 63 |
| Transistors | 106,901 |
| Logic cells | 4,846 + 33,191 filler and tap cells |
| Libraries | 7t-5V (5k) |
| SRAM | No SRAM |
Which parts of the GF180MCU process this design uses: its transistor voltages and where they come from, its gate oxides, and any devices drawn by hand outside the standard cells, SRAM and pads.
| 5 V | 7t-5V standard cells |
|---|---|
| Gate oxides | Thick only (5 V/6 V) in the design itself |
How this design's area splits between logic cells, filler and tap cells, other and outside the user area.
The ten standard cells this design uses most.
| Cell | Library | Instances | What it does |
|---|---|---|---|
| clkbuf_1 | 7t-5V | 751 | Clock buffer |
| nand2_1 | 7t-5V | 643 | 2-input NAND gate |
| nor2_1 | 7t-5V | 419 | 2-input NOR gate |
| buf_1 | 7t-5V | 365 | Buffer |
| aoi21_1 | 7t-5V | 299 | AND-OR-Invert compound gate |
| dffq_1 | 7t-5V | 283 | D flip-flop (1 bit storage) |
| oai21_1 | 7t-5V | 274 | OR-AND-Invert compound gate |
| xor2_1 | 7t-5V | 164 | 2-input XOR gate |
| oai211_1 | 7t-5V | 158 | OR-AND-Invert compound gate |
| nand3_1 | 7t-5V | 138 | 3-input NAND gate |
Logic cells per mm² in each square millimetre of the die. Hatched outlines are SRAM macros; the red outline is the densest mm² that avoids them (5k logic cells per mm²), found by sliding a 1 mm square over the die in 0.1 mm steps, so it can straddle the fixed squares and find more than any one of them. Squares at the edges are partial, so they read low.
Avalon Semiconductors' retro-computing family has been made on 5 shuttles since Dec 2022. Every version, oldest first, with this one in bold:
Tiny Tapeout tile Google shuttle wafer.space die
Every die of this design measured here, oldest first, with this one in bold.
| Made on | Slot | Library | Gate oxides | Logic cells | Per mm² of core | Densest | SRAM |
|---|---|---|---|---|---|---|---|
| Google GFMPW-0 · 105A | 1 × 1 | 7t-5V | 5 V/6 V only | 4,846 | 1k | 5k | none |
| wafer.space Run 1 · AS03 | 1 × 1 | mixed | 5 V/6 V only | 86,629 | 7k | 21k | none |
| wafer.space Run 2 · AS04 | 1 × 1 | AS 7t-3.3V | 3.3 V only | 87,322 | 7k | 19k | none |
Avalon Semiconductors' retro-computing family was tried on Tiny Tapeout 2, and went on to dies of its own on wafer.space Run 1 and wafer.space Run 2.