wafer.space Run 2

Simplest possible PicoSoC implementation using wafer.space flow

PSOC · RISC-V and CPUs · 1 × ½ slot

Rendered from the layout at 2.5 µm per pixel. Layers: NwellDiffusionPolysiliconMetal 1Metal 2Metal 3Metal 4Metal 5Top metalPad openings

Logic density

Inside the core
logic cells per mm²
4k (5% of buffer maximum)
over the 5.02 mm² core: what the design itself packed
Inside the seal ring
logic cells per mm²
2k
over all 9.61 mm² of the slot, pad ring included
Core covered by logic11%
Transistor density
transistors per mm²
210k average

Every figure here is measured from the public layout, the same way for every design on the run: see data and method, and how its designs used the process.

Established as a FOSS flow proof of concept for SoC design. Eventually we hope to add wishbone bus and peripherals, open-drain IO for I2C and I2C controller, bandgap reference and voltage regulators, etc.

Die3.93 × 2.53 mm (9.9 mm²)
Core area5.02 mm² inside the pad ring
as set in the design's own layout settings
Inside the seal ring9.61 mm² (the die less its 26 µm seal ring)
Placements1 on the reticle, in slot D2 PSOC on the reticle
Bond pads72
Transistors1,052,766
Logic cells18,372 + 86,401 filler and tap cells
Libraries 7t-5V (18k)
SRAM8 macros, 32,768 bits

Submission

LicenceApache-2.0 declared
Repository: Apache-2.0 in LICENSE — agrees
Templatewafer-space/gf180mcu-project-template 1.5.5 or 1.5.6
How it was checked
Commit and PDK pin The licence and template were read from the repository at commit a5283bc607b0.The template releases named above are the ones whose Makefile pins the same PDK as that commit (PDK_COMMIT 140b0494c666).
Chip-on-boardNot selected at submission
PrecheckPassed the check it was accepted on, 2026-07-13, gf180mcu-precheck 1.7.1 (from its image)
Passed latest re-run, 2026-08-03, gf180mcu-precheck 1.7.3
step results and logs

Process features

Which parts of the GF180MCU process this design uses: its transistor voltages and where they come from, its gate oxides, and any devices drawn by hand outside the standard cells, SRAM and pads.

5 V7t-5V standard cells, fd SRAM
Gate oxidesThick only (5 V/6 V) in the design itself
I/O librarygf180mcu_fd_io (758 cells)

Where the area went

How this design's area splits between logic cells, SRAM, filler and tap cells, other and pad ring.

17%
26%
50%
  • Logic cells 0.57 mm² (6%)
  • SRAM 1.68 mm² (17%)
  • Filler and tap cells 2.60 mm² (26%)
  • Other 0.18 mm² (2%)
  • Pad ring 4.92 mm² (50%)

Most used cells

The ten standard cells this design uses most.

CellLibraryInstancesWhat it does
dlyb_17t-5V 3,895Delay buffer
nand2_17t-5V 2,2742-input NAND gate
dffq_17t-5V 1,871D flip-flop (1 bit storage)
oai21_17t-5V 1,851OR-AND-Invert compound gate
dlyc_17t-5V 1,108Delay buffer
buf_47t-5V 817Buffer (4x drive)
nor2_17t-5V 8142-input NOR gate
clkinv_17t-5V 533Clock inverter
mux4_17t-5V 5314-input multiplexer
buf_27t-5V 509Buffer (2x drive)

Logic density map

3 logic cells, 72,834 transistors 8,299 logic cells, 154,866 transistors, <1% SRAM 9,020 logic cells, 153,789 transistors, 1% SRAM 649 logic cells, 64,588 transistors, 0% SRAM 2 logic cells, 125,600 transistors 40 logic cells, 188,134 transistors, 40% SRAM 146 logic cells, 152,562 transistors, 81% SRAM 9 logic cells, 80,670 transistors, 43% SRAM 57 logic cells, 13,609 transistors 59 logic cells, 19,707 transistors, 2% SRAM 84 logic cells, 17,049 transistors, 4% SRAM 4 logic cells, 9,358 transistors, 2% SRAM gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 Densest SRAM-free mm²: 3,635 logic cells <1k 8k 9k 1k <1k <1k <1k <1k

Logic cells per mm² in each square millimetre of the die. Hatched outlines are SRAM macros; the red outline is the densest mm² that avoids them (4k logic cells per mm²), found by sliding a 1 mm square over the die in 0.1 mm steps, so it can straddle the fixed squares and find more than any one of them. Squares at the edges are partial, so they read low.

SRAM macros

The ready-made memory blocks this design uses.

MacroCountBits each
gf180mcu_fd_ip_sram__sram512x8m8wm18 4,096

Precheck

Before a design is made, the wafer.space platform checks it against the foundry's design rules. PSOC was accepted on this check, and has been checked again since with newer rules.

All 16 steps passed, with 0 KLayout DRC errors, on 2026-07-13.

Every step, and the latest re-run
StepAccepted on
check 478, 2026-07-13, initial, gf180mcu-precheck 1.7.1 (from its image)
PDK open_pdks 1.0.604, LibreLane 5fe3db1
Latest re-run
check 775, 2026-08-03, drc_update, gf180mcu-precheck 1.7.3
PDK open_pdks 1.0.604, LibreLane 5fe3db1
KLayout.ReadLayoutpassedpassed
KLayout.CheckTopLevelpassedpassed
KLayout.CheckSizepassedpassed
KLayout.GenerateIDpassedpassed
KLayout.Renderpassedpassed
KLayout.Densitypassedpassed
Checker.KLayoutDensitypassedpassed
KLayout.ZeroAreaPolygonspassedpassed
Checker.KLayoutZeroAreaPolygonspassedpassed
KLayout.Antennapassedpassed
Checker.KLayoutAntennapassedpassed
Magic.DRCpassedpassed
Checker.MagicDRCpassedpassed
KLayout.DRCpassedpassed
Checker.KLayoutDRCpassedpassed
KLayout.WriteLayoutpassedpassed
KLayout DRC errors00
Magic DRC errors (advisory)00
Filessteps · log (gzip)steps · log (gzip)

The steps of the gf180mcu-precheck LibreLane flow, as run by platform.wafer.space. The design was accepted on the newest finished check before it was submitted; later re-runs check the same file with updated rules. KLayout DRC is the sign-off check. Magic DRC is advisory: its count does not stop a design. In the logs, Magic's "Error while reading cell" lines about fill cells are messages from its reader, not check failures.

Want a chip of your own like this one?

wafer.space Run 3 takes orders until 9 December 2026. Or start smaller with Tiny Tapeout: the next Tiny Tapeout GF180MCU chips take projects until 7 December 2026, for wafer.space Run 3.