wafer.space Run 2

bio180

DPK1 · RISC-V and CPUs · ½ × 1 slot

Rendered from the layout at 2.5 µm per pixel. Layers: NwellDiffusionPolysiliconMetal 1Metal 2Metal 3Metal 4Metal 5Top metalPad openings

Logic density

Inside the core
logic cells per mm²
15k (20% of buffer maximum)
over the 4.46 mm² core: what the design itself packed
Inside the seal ring
logic cells per mm²
7k
over all 9.57 mm² of the slot, pad ring included
Densest mm²
logic cells per mm²
27k (35% of buffer maximum)
Core covered by logic33%
Transistor density
transistors per mm²
236k average, 263k in the mm² with the most logic cells

Every figure here is measured from the public layout, the same way for every design on the run: see data and method, and how its designs used the process.

Dual Core BIO: The Bao I/O Co-processor from baochip-1x with 4Kb of SRAM on gf180 with SPI host.

Die1.94 × 5.12 mm (9.9 mm²)
Core area4.46 mm² inside the pad ring
as set in the design's own layout settings
Inside the seal ring9.57 mm² (the die less its 26 µm seal ring)
Placements1 on the reticle, in slot G3 DPK1 on the reticle
Bond pads72
Transistors1,052,339
Logic cells66,232 + 120,983 filler and tap cells
Libraries 7t-5V (66k)
SRAM8 macros, 32,768 bits

Submission

LicenceCERN-OHL-P-2.0 declared
Repository: CERN-OHL-W-2.0 in LICENSE, not the declared licence
Templatewafer-space/gf180mcu-project-template 1.5.7
How it was checked
Commit and PDK pin The licence and template were read from the repository at commit 0fe3252bd4af.The template release named above is the one whose Makefile pins the same PDK as that commit (PDK_COMMIT d658698bd8bc).
Chip-on-boardSelected at submission
PrecheckPassed the check it was accepted on, 2026-07-14, gf180mcu-precheck 1.7.1 (from its image)
Passed latest re-run, 2026-08-03, gf180mcu-precheck 1.7.3
step results and logs

Process features

Which parts of the GF180MCU process this design uses: its transistor voltages and where they come from, its gate oxides, and any devices drawn by hand outside the standard cells, SRAM and pads.

5 V7t-5V standard cells, fd SRAM
Gate oxidesThick only (5 V/6 V) in the design itself
I/O librarygf180mcu_fd_io (850 cells)

Where the area went

How this design's area splits between logic cells, SRAM, filler and tap cells, other and pad ring.

15%
17%
12%
55%
  • Logic cells 1.46 mm² (15%)
  • SRAM 1.68 mm² (17%)
  • Filler and tap cells 1.22 mm² (12%)
  • Other 0.09 mm² (1%)
  • Pad ring 5.47 mm² (55%)

Most used cells

The ten standard cells this design uses most.

CellLibraryInstancesWhat it does
nand2_17t-5V 20,0402-input NAND gate
oai21_17t-5V 5,522OR-AND-Invert compound gate
clkinv_17t-5V 5,316Clock inverter
nand3_17t-5V 5,2403-input NAND gate
dffq_17t-5V 3,634D flip-flop (1 bit storage)
dlyc_17t-5V 3,251Delay buffer
buf_47t-5V 2,285Buffer (4x drive)
inv_17t-5V 2,229Inverter
aoi21_17t-5V 2,133AND-OR-Invert compound gate
nor2_17t-5V 2,0152-input NOR gate

Logic density map

1,327 logic cells, 53,437 transistors, 25% SRAM 1,444 logic cells, 47,647 transistors, 23% SRAM 9,653 logic cells, 127,018 transistors, 20% SRAM 8,777 logic cells, 113,349 transistors, 19% SRAM 13,854 logic cells, 159,496 transistors 12,030 logic cells, 144,111 transistors 8,862 logic cells, 143,310 transistors, 15% SRAM 7,541 logic cells, 124,997 transistors, 14% SRAM 1,347 logic cells, 74,188 transistors, 30% SRAM 1,397 logic cells, 64,541 transistors, 28% SRAM 0 logic cells, 132 transistors 0 logic cells, 113 transistors gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 Densest SRAM-free mm²: 26,918 logic cells 1k 1k 10k 9k 14k 12k 9k 8k 1k 1k

Logic cells per mm² in each square millimetre of the die. Hatched outlines are SRAM macros; the red outline is the densest mm² that avoids them (27k logic cells per mm²), found by sliding a 1 mm square over the die in 0.1 mm steps, so it can straddle the fixed squares and find more than any one of them. Squares at the edges are partial, so they read low.

SRAM macros

The ready-made memory blocks this design uses.

MacroCountBits each
gf180mcu_fd_ip_sram__sram512x8m8wm18 4,096

Precheck

Before a design is made, the wafer.space platform checks it against the foundry's design rules. DPK1 was accepted on this check, and has been checked again since with newer rules.

All 17 steps passed, with 0 KLayout DRC errors, on 2026-07-14.

Every step, and the latest re-run
StepAccepted on
check 484, 2026-07-14, initial, gf180mcu-precheck 1.7.1 (from its image)
PDK open_pdks 1.0.604, LibreLane 5fe3db1
Latest re-run
check 789, 2026-08-03, drc_update, gf180mcu-precheck 1.7.3
PDK open_pdks 1.0.604, LibreLane 5fe3db1
KLayout.ReadLayoutpassedpassed
KLayout.CheckTopLevelpassedpassed
KLayout.CheckSizepassedpassed
KLayout.CheckPadMaskpassedpassed
KLayout.GenerateIDpassedpassed
KLayout.Renderpassedpassed
KLayout.Densitypassedpassed
Checker.KLayoutDensitypassedpassed
KLayout.ZeroAreaPolygonspassedpassed
Checker.KLayoutZeroAreaPolygonspassedpassed
KLayout.Antennapassedpassed
Checker.KLayoutAntennapassedpassed
Magic.DRCpassedpassed
Checker.MagicDRCpassedpassed
KLayout.DRCpassedpassed
Checker.KLayoutDRCpassedpassed
KLayout.WriteLayoutpassedpassed
KLayout DRC errors00
Magic DRC errors (advisory)00
Filessteps · log (gzip)steps · log (gzip)

The steps of the gf180mcu-precheck LibreLane flow, as run by platform.wafer.space. The design was accepted on the newest finished check before it was submitted; later re-runs check the same file with updated rules. KLayout DRC is the sign-off check. Magic DRC is advisory: its count does not stop a design. In the logs, Magic's "Error while reading cell" lines about fill cells are messages from its reader, not check failures.

Want a chip of your own like this one?

wafer.space Run 3 takes orders until 9 December 2026. Or start smaller with Tiny Tapeout: the next Tiny Tapeout GF180MCU chips take projects until 7 December 2026, for wafer.space Run 3.