wafer.space Run 2

Cabrera CoB

CAB1 · Other digital · 1 × ½ slot

Rendered from the layout at 2.5 µm per pixel. Layers: NwellDiffusionPolysiliconMetal 1Metal 2Metal 3Metal 4Metal 5Top metalPad openings

Logic density

Inside the core
logic cells per mm²
10k (14% of buffer maximum)
over the 5.02 mm² core: what the design itself packed
Inside the seal ring
logic cells per mm²
5k
over all 9.61 mm² of the slot, pad ring included
Densest mm²
logic cells per mm²
19k (25% of buffer maximum)
Core covered by logic29%
Transistor density
transistors per mm²
204k average, 265k in the mm² with the most logic cells

Every figure here is measured from the public layout, the same way for every design on the run: see data and method, and how its designs used the process.

Die3.93 × 2.53 mm (9.9 mm²)
Core area5.02 mm² inside the pad ring
as set in the design's own layout settings
Inside the seal ring9.61 mm² (the die less its 26 µm seal ring)
Placements1 on the reticle, in slot C1 CAB1 on the reticle
Bond pads72
Probe pads16
Transistors1,025,108
Logic cells52,199 + 100,188 filler and tap cells
Libraries 7t-5V (52k)
SRAM6 macros, 20,480 bits

Submission

LicenceApache-2.0 declared
Repository: Apache-2.0 in LICENSE — agrees
Templatewafer-space/gf180mcu-project-template 1.5.5 or 1.5.6
How it was checked
Commit and PDK pin The licence and template were read from the repository at commit 2081f9bda695.The template releases named above are the ones whose Makefile pins the same PDK as that commit (PDK_COMMIT 140b0494c666).
Chip-on-boardSelected at submission
PrecheckPassed the check it was accepted on, 2026-07-15, gf180mcu-precheck 1.7.2 (from its image)
Passed latest re-run, 2026-08-02, gf180mcu-precheck 1.7.3
step results and logs

Process features

Which parts of the GF180MCU process this design uses: its transistor voltages and where they come from, its gate oxides, and any devices drawn by hand outside the standard cells, SRAM and pads.

3.3 V40 custom transistors
5 V7t-5V standard cells, fd SRAM, 104 custom transistors
6 V44 custom transistors
Gate oxidesThin (3.3 V) and thick (5 V/6 V) in the design itself
MIM capacitors9 (900 µm², between Metal4 and Metal5)
all in reused simple_por
High-resistance poly resistors88 (2,200 µm²)
all in reused simple_por
Unsalicided poly resistors13 (376 µm²)
I/O librarygf180mcu_fd_io (758 cells)

Where the area went

How this design's area splits between logic cells, SRAM, filler and tap cells, other and pad ring.

14%
11%
15%
9%
50%
  • Logic cells 1.44 mm² (14%)
  • SRAM 1.13 mm² (11%)
  • Filler and tap cells 1.52 mm² (15%)
  • Other 0.93 mm² (9%)
  • Pad ring 4.92 mm² (50%)

Most used cells

The ten standard cells this design uses most.

CellLibraryInstancesWhat it does
buf_27t-5V 12,985Buffer (2x drive)
nand2_17t-5V 5,5712-input NAND gate
dffq_17t-5V 5,348D flip-flop (1 bit storage)
oai21_17t-5V 3,778OR-AND-Invert compound gate
aoi21_17t-5V 3,001AND-OR-Invert compound gate
nor2_17t-5V 2,7562-input NOR gate
clkbuf_17t-5V 1,789Clock buffer
aoi22_17t-5V 1,752AND-OR-Invert (2x2 inputs)
clkinv_17t-5V 1,347Clock inverter
dffrnq_17t-5V 1,191D flip-flop with reset

Logic density map

150 logic cells, 52,295 transistors, 17% SRAM 550 logic cells, 98,588 transistors, 44% SRAM 7,862 logic cells, 134,179 transistors, 16% SRAM 1,678 logic cells, 60,032 transistors 6,616 logic cells, 113,003 transistors, 1% SRAM 16,803 logic cells, 226,969 transistors, 3% SRAM 15,591 logic cells, 220,925 transistors, 16% SRAM 2,488 logic cells, 91,942 transistors, 16% SRAM 0 logic cells, 3,422 transistors 0 logic cells, 3,149 transistors 461 logic cells, 13,573 transistors 0 logic cells, 7,031 transistors gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram512x8m8wm1 gf180mcu_fd_ip_sram__sram256x8m8wm1 gf180mcu_fd_ip_sram__sram256x8m8wm1 Densest SRAM-free mm²: 18,627 logic cells <1k 1k 8k 2k 7k 17k 16k 2k

Logic cells per mm² in each square millimetre of the die. Hatched outlines are SRAM macros; the red outline is the densest mm² that avoids them (19k logic cells per mm²), found by sliding a 1 mm square over the die in 0.1 mm steps, so it can straddle the fixed squares and find more than any one of them. Squares at the edges are partial, so they read low.

SRAM macros

The ready-made memory blocks this design uses.

Precheck

Before a design is made, the wafer.space platform checks it against the foundry's design rules. CAB1 was accepted on this check, and has been checked again since with newer rules.

All 17 steps passed, with 0 KLayout DRC errors, on 2026-07-15.

Every step, and the latest re-run
StepAccepted on
check 557, 2026-07-15, initial, gf180mcu-precheck 1.7.2 (from its image)
PDK open_pdks 1.0.604, LibreLane 5fe3db1
Latest re-run
check 742, 2026-08-02, drc_update, gf180mcu-precheck 1.7.3
PDK open_pdks 1.0.604, LibreLane 5fe3db1
KLayout.ReadLayoutpassedpassed
KLayout.CheckTopLevelpassedpassed
KLayout.CheckSizepassedpassed
KLayout.CheckPadMaskpassedpassed
KLayout.GenerateIDpassedpassed
KLayout.Renderpassedpassed
KLayout.Densitypassedpassed
Checker.KLayoutDensitypassedpassed
KLayout.ZeroAreaPolygonspassedpassed
Checker.KLayoutZeroAreaPolygonspassedpassed
KLayout.Antennapassedpassed
Checker.KLayoutAntennapassedpassed
Magic.DRCpassedpassed
Checker.MagicDRCadvisory warningadvisory warning
KLayout.DRCpassedpassed
Checker.KLayoutDRCpassedpassed
KLayout.WriteLayoutpassedpassed
KLayout DRC errors00
Magic DRC errors (advisory)505505
Filessteps · log (gzip)steps · log (gzip)

The steps of the gf180mcu-precheck LibreLane flow, as run by platform.wafer.space. The design was accepted on the newest finished check before it was submitted; later re-runs check the same file with updated rules. KLayout DRC is the sign-off check. Magic DRC is advisory: its count does not stop a design. In the logs, Magic's "Error while reading cell" lines about fill cells are messages from its reader, not check failures.

Want a chip of your own like this one?

wafer.space Run 3 takes orders until 9 December 2026. Or start smaller with Tiny Tapeout: the next Tiny Tapeout GF180MCU chips take projects until 7 December 2026, for wafer.space Run 3.