wafer.space Run 2

ISHI-KAI multi-project die 2

ISHI · Multi-project die · ½ × 1 slot

Rendered from the layout at 2.5 µm per pixel. Layers: NwellDiffusionPolysiliconMetal 1Metal 2Metal 3Metal 4Metal 5Top metalPad openings

Every figure here is measured from the public layout, the same way for every design on the run: see data and method, and how its designs used the process.

ISHI-KAI's Multiple Projects Wafer for Wafer.Sapce GF180 Run 2.

Die1.94 × 5.12 mm (9.9 mm²)
Core area4.47 mm² inside the pad ring
the project template's, 442 µm in from each edge
Inside the seal ring9.57 mm² (the die less its 26 µm seal ring)
Placements1 on the reticle, in slot G3 ISHI on the reticle
Bond pads72
Probe pads63
Transistors44,494
Logic cells0 + 63 filler and tap cells
SRAMNo SRAM

Submission

LicenceApache-2.0 declared
Repository: Apache-2.0 in LICENSE — agrees
How it was checked
Commit and PDK pin The licence and template were read from the repository at commit 1a0be37edb4b.
Chip-on-boardSelected at submission
PrecheckPassed the check it was accepted on, 2026-07-14, gf180mcu-precheck 1.7.2 (from its image)
Passed latest re-run, 2026-08-02, gf180mcu-precheck 1.7.3
step results and logs

Process features

Which parts of the GF180MCU process this design uses: its transistor voltages and where they come from, its gate oxides, and any devices drawn by hand outside the standard cells, SRAM and pads.

3.3 V9,268 custom transistors
5 V4,589 custom transistors
6 V90 custom transistors
Gate oxidesThin (3.3 V) and thick (5 V/6 V) in the design itself
MIM capacitors92 (13,262 µm², between Metal4 and Metal5)
MOS capacitors840 (35,280 µm²)
all in reused fill10_supplyVDD
High-resistance poly resistors33 (660 µm²)
Unsalicided poly resistors438 (32,465 µm²)
Diodes64 (307 µm²)
Deep N-well73 (19,484 µm²)
I/O librarygf180mcu_fd_io (785 cells)

Where the area went

How this design's area splits between other and pad ring.

45%
55%
  • Other 4.47 mm² (45%)
  • Pad ring 5.46 mm² (55%)

Precheck

Before a design is made, the wafer.space platform checks it against the foundry's design rules. ISHI was accepted on this check, and has been checked again since with newer rules.

All 17 steps passed, with 0 KLayout DRC errors, on 2026-07-14.

Every step, and the latest re-run
StepAccepted on
check 510, 2026-07-14, initial, gf180mcu-precheck 1.7.2 (from its image)
PDK open_pdks 1.0.604, LibreLane 5fe3db1
Latest re-run
check 706, 2026-08-02, drc_update, gf180mcu-precheck 1.7.3
PDK open_pdks 1.0.604, LibreLane 5fe3db1
KLayout.ReadLayoutpassedpassed
KLayout.CheckTopLevelpassedpassed
KLayout.CheckSizepassedpassed
KLayout.CheckPadMaskpassedpassed
KLayout.GenerateIDpassedpassed
KLayout.Renderpassedpassed
KLayout.Densitypassedpassed
Checker.KLayoutDensitypassedpassed
KLayout.ZeroAreaPolygonspassedpassed
Checker.KLayoutZeroAreaPolygonspassedpassed
KLayout.Antennapassedpassed
Checker.KLayoutAntennapassedpassed
Magic.DRCpassedpassed
Checker.MagicDRCpassedpassed
KLayout.DRCpassedpassed
Checker.KLayoutDRCpassedpassed
KLayout.WriteLayoutpassedpassed
KLayout DRC errors00
Magic DRC errors (advisory)00
Filessteps · log (gzip)steps · log (gzip)

The steps of the gf180mcu-precheck LibreLane flow, as run by platform.wafer.space. The design was accepted on the newest finished check before it was submitted; later re-runs check the same file with updated rules. KLayout DRC is the sign-off check. Magic DRC is advisory: its count does not stop a design. In the logs, Magic's "Error while reading cell" lines about fill cells are messages from its reader, not check failures.

Want a chip of your own like this one?

wafer.space Run 3 takes orders until 9 December 2026. Or start smaller with Tiny Tapeout: the next Tiny Tapeout GF180MCU chips take projects until 7 December 2026, for wafer.space Run 3.