Tiny Tapeout GF 26b · Die T26B on wafer.space Run 2

CIM Controller with BIST and Fault Map (GF180)

098 · Other digital · 1 × 2 tiles

by Prof. Santhosh Sivasubramani, IIT Delhi

Rendered from the layout at 0.33 µm per pixel. Layers: NwellDiffusionPolysiliconMetal 1Metal 2Metal 3Metal 4Metal 5Top metalPad openings

Logic density

Core average
logic cells per mm²
15k (20% of buffer maximum)
Densest 0.1 mm square
logic cells per mm²
29k (39% of buffer maximum)
Core covered by logic47%
Transistor density
transistors per mm²
267k average, 326k in the 0.1 mm square with the most logic cells

Every figure here is measured from the public layout, the same way for every design on the chip: see data and method, and how its designs used the process.

GF180mcuD digital compute-in-memory peripheral: 8x8 1-bit cell array with built-in self-test (march/checkerboard/diagonal patterns), 64-bit sticky fault map, 16-bit dot-product accumulator over user-programmable row activations, SPI-programmable, irq output, 25 MHz signoff clock, 1x2 tile

Size347 × 325 µm (0.113 mm²)
Macrott_um_santhosh_cim_bist_gf
Filesdocumentation · licence · layout and netlist in Tiny Tapeout GF 26b
Tiles1 × 2 at column 5, row 10 of the tile grid
Mux address98
LanguageVerilog
Clock25 MHz
Built withLibreLane 3.0.3, open_pdks 54435919abff
Transistors30,834
Logic cells1,759 + 3,674 filler and tap cells
Libraries 7t-5V (2k)
SRAMNo SRAM

Process features

Which parts of the GF180MCU process this design uses: its transistor voltages and where they come from, its gate oxides, and any devices drawn by hand outside the standard cells, SRAM and pads.

5 V7t-5V standard cells
Gate oxidesThick only (5 V/6 V) in the design itself

Where the area went

How this project's area splits between logic cells, filler and tap cells and other.

47%
47%
  • Logic cells 0.05 mm² (47%)
  • Filler and tap cells 0.05 mm² (47%)
  • Other 0.01 mm² (7%)

Most used cells

The ten standard cells this design uses most.

CellLibraryInstancesWhat it does
dffrnq_17t-5V 229D flip-flop with reset
nand2_17t-5V 1872-input NAND gate
mux2_27t-5V 1072-input multiplexer (2x drive)
buf_27t-5V 93Buffer (2x drive)
oai21_17t-5V 93OR-AND-Invert compound gate
dlyb_17t-5V 84Delay buffer
nor2_17t-5V 792-input NOR gate
clkbuf_27t-5V 66Clock buffer (2x drive)
aoi22_17t-5V 65AND-OR-Invert (2x2 inputs)
clkinv_17t-5V 63Clock inverter

Logic density map

33 logic cells, 2,220 transistors 106 logic cells, 2,479 transistors 122 logic cells, 2,530 transistors 9 logic cells, 902 transistors 177 logic cells, 3,108 transistors 275 logic cells, 3,323 transistors 276 logic cells, 3,123 transistors 54 logic cells, 1,095 transistors 147 logic cells, 2,829 transistors 211 logic cells, 3,085 transistors 217 logic cells, 3,112 transistors 21 logic cells, 1,091 transistors 6 logic cells, 465 transistors 54 logic cells, 614 transistors 43 logic cells, 645 transistors 8 logic cells, 213 transistors Densest SRAM-free 0.1 mm square: 293 logic cells 3k 11k 12k 18k 27k 28k 15k 21k 22k

Logic cells per mm² in each 0.1 mm square of the project (counted in the square, scaled up to a mm²). Hatched outlines are SRAM macros; the red outline is the densest 0.1 mm square that avoids them (29k logic cells per mm²), found by sliding a 0.1 mm square over the project in 20 µm steps, so it can straddle the fixed squares and find more than any one of them. Squares at the edges are partial, so they read low.

Want your own design on a chip like this one?

Start with a tile: the next Tiny Tapeout GF180MCU chips take projects until 7 December 2026, for wafer.space Run 3. For a die of your own, wafer.space Run 3 takes orders until 9 December 2026.

Tiny Tapeout and wafer.space are independent companies that work together (announcement). Tiny Tapeout runs its own shuttles: it takes the projects, builds the die, and sells and supports the chips and boards. wafer.space has the dies manufactured on its GF180MCU runs, and these pages are wafer.space's measurements of them. For anything about a Tiny Tapeout project, chip or order, contact Tiny Tapeout.