wafer.space Run 2

Test chip with 5V SRAM blocks

FS03 · Memory test chip · ½ × 1 slot

Rendered from the layout at 2.5 µm per pixel. Layers: NwellDiffusionPolysiliconMetal 1Metal 2Metal 3Metal 4Metal 5Top metalPad openings

Logic density

Inside the core
logic cells per mm²
1k (1% of buffer maximum)
over the 4.47 mm² core: what the design itself packed
Inside the seal ring
logic cells per mm²
<1k
over all 9.57 mm² of the slot, pad ring included
Densest mm²
logic cells per mm²
2k (2% of buffer maximum)
Core covered by logic2%
Transistor density
transistors per mm²
245k average, 215k in the mm² with the most logic cells

Every figure here is measured from the public layout, the same way for every design on the run: see data and method, and how its designs used the process.

Die1.94 × 5.12 mm (9.9 mm²)
Core area4.47 mm² inside the pad ring
the project template's, 442 µm in from each edge
Inside the seal ring9.57 mm² (the die less its 26 µm seal ring)
Placements1 on the reticle, in slot G5 FS03 on the reticle
Bond pads72
Transistors1,094,448
Logic cells3,788 + 78,222 filler and tap cells
Libraries 7t-5V (4k)
SRAMNo SRAM

Submission

LicenceApache-2.0 declared
Repository: Apache-2.0 (in source file headers) — agrees
How it was checked
Commit and PDK pin The licence and template were read from the repository at commit 2ce18dbe27df.
Chip-on-boardSelected at submission
PrecheckPassed the check it was accepted on, 2026-07-15, gf180mcu-precheck 1.7.2 (from its image)
Passed latest re-run, 2026-08-03, gf180mcu-precheck 1.7.3
step results and logs

Process features

Which parts of the GF180MCU process this design uses: its transistor voltages and where they come from, its gate oxides, and any devices drawn by hand outside the standard cells, SRAM and pads.

5 V7t-5V standard cells, 323,352 custom transistors
Gate oxidesThick only (5 V/6 V) in the design itself
I/O librarygf180mcu_fd_io (850 cells)

Where the area went

How this design's area splits between logic cells, filler and tap cells, other and pad ring.

32%
12%
55%
  • Logic cells 0.08 mm² (1%)
  • Filler and tap cells 3.21 mm² (32%)
  • Other 1.18 mm² (12%)
  • Pad ring 5.46 mm² (55%)

Most used cells

The ten standard cells this design uses most.

CellLibraryInstancesWhat it does
buf_27t-5V 1,246Buffer (2x drive)
buf_47t-5V 1,230Buffer (4x drive)
buf_17t-5V 788Buffer
clkbuf_17t-5V 300Clock buffer
aoi22_17t-5V 66AND-OR-Invert (2x2 inputs)
dffq_17t-5V 37D flip-flop (1 bit storage)
clkbuf_27t-5V 34Clock buffer (2x drive)
dffq_27t-5V 24D flip-flop (1 bit storage, 2x drive)
nand3_27t-5V 93-input NAND gate (2x drive)
and4_17t-5V 84-input AND gate

Logic density map

40 logic cells, 72,394 transistors 35 logic cells, 64,056 transistors 77 logic cells, 140,224 transistors 571 logic cells, 123,745 transistors 140 logic cells, 130,741 transistors 1,191 logic cells, 127,154 transistors 496 logic cells, 124,030 transistors 1,018 logic cells, 133,409 transistors 115 logic cells, 86,293 transistors 105 logic cells, 92,099 transistors 0 logic cells, 156 transistors 0 logic cells, 147 transistors Densest SRAM-free mm²: 1,789 logic cells <1k <1k <1k 1k <1k 1k <1k 1k <1k <1k

Logic cells per mm² in each square millimetre of the die. Hatched outlines are SRAM macros; the red outline is the densest mm² that avoids them (2k logic cells per mm²), found by sliding a 1 mm square over the die in 0.1 mm steps, so it can straddle the fixed squares and find more than any one of them. Squares at the edges are partial, so they read low.

Precheck

Before a design is made, the wafer.space platform checks it against the foundry's design rules. FS03 was accepted on this check, and has been checked again since with newer rules.

All 17 steps passed, with 0 KLayout DRC errors, on 2026-07-15.

Every step, and the latest re-run
StepAccepted on
check 664, 2026-07-15, initial, gf180mcu-precheck 1.7.2 (from its image)
PDK open_pdks 1.0.604, LibreLane 5fe3db1
Latest re-run
check 777, 2026-08-03, drc_update, gf180mcu-precheck 1.7.3
PDK open_pdks 1.0.604, LibreLane 5fe3db1
KLayout.ReadLayoutpassedpassed
KLayout.CheckTopLevelpassedpassed
KLayout.CheckSizepassedpassed
KLayout.CheckPadMaskpassedpassed
KLayout.GenerateIDpassedpassed
KLayout.Renderpassedpassed
KLayout.Densitypassedpassed
Checker.KLayoutDensitypassedpassed
KLayout.ZeroAreaPolygonspassedpassed
Checker.KLayoutZeroAreaPolygonspassedpassed
KLayout.Antennapassedpassed
Checker.KLayoutAntennapassedpassed
Magic.DRCpassedpassed
Checker.MagicDRCadvisory warningadvisory warning
KLayout.DRCpassedpassed
Checker.KLayoutDRCpassedpassed
KLayout.WriteLayoutpassedpassed
KLayout DRC errors00
Magic DRC errors (advisory)1,2601,260
Filessteps · log (gzip)steps · log (gzip)

The steps of the gf180mcu-precheck LibreLane flow, as run by platform.wafer.space. The design was accepted on the newest finished check before it was submitted; later re-runs check the same file with updated rules. KLayout DRC is the sign-off check. Magic DRC is advisory: its count does not stop a design. In the logs, Magic's "Error while reading cell" lines about fill cells are messages from its reader, not check failures.

Want a chip of your own like this one?

wafer.space Run 3 takes orders until 9 December 2026. Or start smaller with Tiny Tapeout: the next Tiny Tapeout GF180MCU chips take projects until 7 December 2026, for wafer.space Run 3.