Tiny Tapeout GF 0.1 · Made on a GlobalFoundries private MPW run
Cell test: GF 7-track cells as 3.3 V transistors
CEL2 · Test structures · 0.225 × 0.225 mm
Rendered from the layout at 0.33 µm per pixel. Layers: NwellDiffusionPolysiliconMetal 1Metal 2Metal 3Metal 4Metal 5Top metalPad openings
Logic density
| Core average logic cells per mm² | 20k (27% of buffer maximum) |
|---|---|
| Densest 0.1 mm square logic cells per mm² | 45k (59% of buffer maximum) |
| Core covered by logic | 29% |
| Transistor density transistors per mm² | 172k average, 272k in the 0.1 mm square with the most logic cells |
Every figure here is measured from the public layout, the same way for every design on the chip: see data and method, and how its designs used the process.
Standard cell test in the foundry's 7-track 5 V cells with the thick-oxide layers removed, so they are made as 3.3 V transistors. A chain of 1,024 inverters delays a Manchester-coded counter, so the speed of the cells can be measured on the chip from its output pin; each pair of cell tests has a core supply of its own.
| Size | 225 × 225 µm (0.051 mm²) |
|---|---|
| Cell | tt_cell_macro_2 |
| Transistors | 9,084 |
| Logic cells | 1,074 + 1,432 filler and tap cells |
| Libraries | 7t-5V as 3.3V (1k) |
| SRAM | No SRAM |
Process features
Which parts of the GF180MCU process this design uses: its transistor voltages and where they come from, its gate oxides, and any devices drawn by hand outside the standard cells, SRAM and pads.
| 3.3 V | 7t-5V as 3.3V standard cells |
|---|---|
| Gate oxides | Thin only (3.3 V) in the design itself |
Where the area went
How this project's area splits between logic cells, filler and tap cells and other.
- Logic cells 0.02 mm² (29%)
- Filler and tap cells 0.02 mm² (42%)
- Other 0.02 mm² (29%)
Most used cells
The ten standard cells this design uses most.
| Cell | Library | Instances | What it does |
|---|---|---|---|
| inv_2 | 7t-5V as 3.3V | 917 | Inverter (2x drive) |
| inv_1 | 7t-5V as 3.3V | 106 | Inverter |
| dffq_4 | 7t-5V as 3.3V | 11 | D flip-flop (1 bit storage, 4x drive) |
| xor2_1 | 7t-5V as 3.3V | 6 | 2-input XOR gate |
| clkbuf_16 | 7t-5V as 3.3V | 3 | Clock buffer (16x drive) |
| clkinv_2 | 7t-5V as 3.3V | 3 | Clock inverter (2x drive) |
| nand2_1 | 7t-5V as 3.3V | 3 | 2-input NAND gate |
| xnor2_1 | 7t-5V as 3.3V | 3 | 2-input XNOR gate |
| buf_2 | 7t-5V as 3.3V | 2 | Buffer (2x drive) |
| mux4_1 | 7t-5V as 3.3V | 2 | 4-input multiplexer |
Logic density map
Logic cells per mm² in each 0.1 mm square of the block (counted in the square, scaled up to a mm²). Hatched outlines are SRAM macros; the red outline is the densest 0.1 mm square that avoids them (45k logic cells per mm²), found by sliding a 0.1 mm square over the block in 20 µm steps, so it can straddle the fixed squares and find more than any one of them. Squares at the edges are partial, so they read low.
Tiny Tapeout and wafer.space are independent companies that work together (announcement). Tiny Tapeout runs its own shuttles: it takes the projects, builds the die, and sells and supports the chips and boards. wafer.space has the dies manufactured on its GF180MCU runs, and these pages are wafer.space's measurements of them. For anything about a Tiny Tapeout project, chip or order, contact Tiny Tapeout.