Tiny Tapeout GF 26a · Die T26A on wafer.space Run 2

2x2 CNN Accelerator PE Grid with UART

005 · Accelerators · 1 × 1 tile

by Vidhyanandhan Sathishkumar

Rendered from the layout at 0.33 µm per pixel. Layers: NwellDiffusionPolysiliconMetal 1Metal 2Metal 3Metal 4Metal 5Top metalPad openings

Logic density

Core average
logic cells per mm²
27k (36% of buffer maximum)
Densest 0.1 mm square
logic cells per mm²
36k (47% of buffer maximum)
Core covered by logic80%
Transistor density
transistors per mm²
308k average, 325k in the 0.1 mm square with the most logic cells

Every figure here is measured from the public layout, the same way for every design on the chip: see data and method, and how its designs used the process.

UART-controlled 2x2 systolic processing-element grid for CNN inference. Send 3-byte packets over UART to drive activations/weights; receive 2-byte psum results.

Size347 × 161 µm (0.056 mm²)
Macrott_um_peg_top
Filesdocumentation · licence · layout and netlist in Tiny Tapeout GF 26a
Tiles1 × 1 at column 1, row 8 of the tile grid
Mux address5
LanguageSystemVerilog
Clock25 MHz
Built withLibreLane 3.0.3, open_pdks 54435919abff
Transistors17,224
Logic cells1,536 + 1,307 filler and tap cells
Libraries 7t-5V (2k)
SRAMNo SRAM

Process features

Which parts of the GF180MCU process this design uses: its transistor voltages and where they come from, its gate oxides, and any devices drawn by hand outside the standard cells, SRAM and pads.

5 V7t-5V standard cells
Gate oxidesThick only (5 V/6 V) in the design itself

Where the area went

How this project's area splits between logic cells, filler and tap cells and other.

80%
12%
  • Logic cells 0.05 mm² (80%)
  • Filler and tap cells 0.01 mm² (12%)
  • Other 4,033 µm² (7%)

Most used cells

The ten standard cells this design uses most.

CellLibraryInstancesWhat it does
dffrnq_17t-5V 237D flip-flop with reset
nand2_17t-5V 2032-input NAND gate
oai21_17t-5V 129OR-AND-Invert compound gate
clkinv_17t-5V 114Clock inverter
dlyb_17t-5V 88Delay buffer
aoi21_17t-5V 74AND-OR-Invert compound gate
mux2_27t-5V 692-input multiplexer (2x drive)
nor2_17t-5V 692-input NOR gate
clkbuf_27t-5V 58Clock buffer (2x drive)
xor2_17t-5V 572-input XOR gate

Logic density map

224 logic cells, 3,184 transistors 325 logic cells, 3,082 transistors 286 logic cells, 3,207 transistors 125 logic cells, 1,342 transistors 138 logic cells, 1,896 transistors 183 logic cells, 1,836 transistors 185 logic cells, 1,850 transistors 70 logic cells, 827 transistors Densest SRAM-free 0.1 mm square: 359 logic cells 22k 32k 29k 14k 18k 18k

Logic cells per mm² in each 0.1 mm square of the project (counted in the square, scaled up to a mm²). Hatched outlines are SRAM macros; the red outline is the densest 0.1 mm square that avoids them (36k logic cells per mm²), found by sliding a 0.1 mm square over the project in 20 µm steps, so it can straddle the fixed squares and find more than any one of them. Squares at the edges are partial, so they read low.

Want your own design on a chip like this one?

Start with a tile: the next Tiny Tapeout GF180MCU chips take projects until 7 December 2026, for wafer.space Run 3. For a die of your own, wafer.space Run 3 takes orders until 9 December 2026.

Tiny Tapeout and wafer.space are independent companies that work together (announcement). Tiny Tapeout runs its own shuttles: it takes the projects, builds the die, and sells and supports the chips and boards. wafer.space has the dies manufactured on its GF180MCU runs, and these pages are wafer.space's measurements of them. For anything about a Tiny Tapeout project, chip or order, contact Tiny Tapeout.